Power transistor device including power transistors in darlingto

Details Power transistor device including power transistors in darlingto Power transistor device including power transistors in darlingto

1993-04-27

1995-03-14

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257551, 257577, 361263, 315209T, 123651, 327110, 327575, H02H 902, G05F 1613, H01L 2702

Patent

active

053979141

ABSTRACT:
In a transistor where collector is connected to an inductive load and switching current flows, a Zener diode comprising structure of plural pn-junctions constituted in series form to a polysilicon is provided between collector and base. Further MOSFET is switch-controlled by control voltage formed based on Zener current flowing through the Zener diode, and current path in parallel form to the Zener diode is constituted. Since temperature characteristic coefficient of a Zener diode formed in a polysilicon film is very small, the reverse voltage generated in the inductive load can be set to stable voltage in spite of the temperature variation. Further the MOSFET is provided in parallel form, thereby relatively large ON-resistance value of the Zener diode can be decreased.

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patent: 5136348 (1992-01-01), Tsuzuki et al.
patent: 5204988 (1993-04-01), Sakurai

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