Power transistor device having ultra deep increased concentratio

Details Power transistor device having ultra deep increased concentratio Power transistor device having ultra deep increased concentratio

1994-09-30

1997-08-26

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257145, 257339, 257342, H01L 2910, H01L 2978

Patent

active

056613148

ABSTRACT:
A cellular insulated gate bipolar transistor ("IGBT") device employs increased concentration in the active region between spaced bases to a depth greater than the depth of the base regions. The implant dose which is the source of the increased concentration is about 3.5.times.10.sup.12 atoms per centimeter squared and is driven for about 10 hours at 1175.degree. C. Lifetime is reduced by an increased radiation dose to reduce switching loss without reducing breakdown voltage or increasing forward voltage drop above previous levels. The increased concentration region permits a reduction in the spacing between bases and provides a region of low localized bipolar gain, increasing the device latch current. The avalanche energy which the device can successfully absorb while turning off an inductive load is significantly increased. The very deep increased conduction region is formed before the body and source regions in a novel process for making the new junction pattern.

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International Electron Devices Meeting, 1985, Washington, D.C., Dec. 1, 1985 Tech. Digest pp. 146-149.

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