Power transistor device having hot-location and cool-location te

Details Power transistor device having hot-location and cool-location te Power transistor device having hot-location and cool-location te

1999-08-19

2000-11-07

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257108, 257337, 257470, H01L 2978

Patent

active

06144085&

ABSTRACT:
A power transistor device, for example a MOSFET or an IGBT, comprises a semiconductor body (10) which accommodates an array (11) of parallel device cells (1a) in which heat is generated in operation of the device. A hot-location temperature sensor (Mh) is located inside the array (11), and a cool-location temperature sensor (Mc) is located outside the array (11). These sensors each comprises at least one sensor cell (1b; 1c) which is of the same transistor type as the device cells (1a). The sensor cells (1b; 1c) have a cellular region structure (12,13,14,15) similar to that of the device cells (1a), but each sensor (Mh; Mc) has a respective output electrode (31; 32) separate from electrodes (22,23,25) of the device cells (1a). A detection circuit (100,101) is coupled to the respective output electrodes (31; 32) of the hot-location and cool-location temperature sensors (Mh; Mc) for detecting a temperature difference between the hot and cool locations by comparing voltage signals (dV(T)) from the output electrodes (31; 32).

REFERENCES:
patent: 4931844 (1990-06-01), Zommer
patent: 5336943 (1994-08-01), Kelly et al.
patent: 5444219 (1995-08-01), Kelly
patent: 5726481 (1998-03-01), Moody
patent: 5828263 (1998-10-01), Gantioler et al.
patent: 5886515 (1999-03-01), Kelly
patent: 5994752 (1999-11-01), Sander et al.

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