Power transistor device having collector voltage clamped to stab

Details Power transistor device having collector voltage clamped to stab Power transistor device having collector voltage clamped to stab

1994-11-18

1996-03-26

Hille, Rolfe

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257551, 257577, 361263, 315209T, 123651, 327110, 327575, H02H 902, G05F 1613, H01L 2702

Patent

active

055023380

ABSTRACT:
A power transistor device is provided which has a function of clamping the collector voltage to a stable level for a wide range of temperature variations. In the power transistor device, a plurality of pn junctions are formed to fabricate Zener diodes in the polycrystalline silicon film in the form of rings. The ring configuration of the Zener diodes eliminates an end at the pn junction and prevents the junction surface from being exposed, making it possible to use as a stable Zener voltage the dielectric strength characteristic of the pn junction having a very small temperature coefficient.

REFERENCES:
patent: 4013904 (1977-03-01), Chick
patent: 4293868 (1981-10-01), Iizuka et al.
patent: 4618875 (1986-10-01), Flohrs
patent: 4928053 (1990-05-01), Skard et al.
patent: 5025298 (1991-06-01), Fay et al.
patent: 5079608 (1992-01-01), Wodarczyk et al.
patent: 5115369 (1992-05-01), Robb et al.
patent: 5136348 (1992-08-01), Tsuzuki et al.
patent: 5204988 (1993-04-01), Sakurai
patent: 5365099 (1994-11-01), Phipps et al.

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