Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Reexamination Certificate
2005-07-26
2008-05-06
Tra, Quan (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
C327S108000
Reexamination Certificate
active
07368972
ABSTRACT:
The invention relates to a gate control device10of a power semiconductor component11of the IGBT type. A ramp generator circuit20delivers a reference gate voltage at its output. A stage for the current amplification of the said reference voltage delivers a gate current to the IGBT component, this amplification stage comprising an ignition circuit30and a rapid extinction circuit40.A slow extinction circuit50is connected between the gate G of the IGBT component and the output of the generator circuit. A circuit60for the detection of a collector-emitter voltage of the component is connected to a feedback circuit70delivering a feedback signal71that acts on the rapid extinction circuit40and on the output22of the generator circuit.
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patent: 7038500 (2006-05-01), do Nascimento
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H.G. Eckel, L. Sock, “Optimization of the Turn-Off Performance of IGBT at Overcurrent and Short-Circuit Current,” Institute for Electrical Drives, University of Erlangen, Germany, 1993, pp. 317-322.
Eckel et al. “Optimization of the Turn-Off Performance of IGBT at Overcurrent and Short-Circuit Current.” 1993. Institute for Electrical Drives, University of Erlangen, Germany. p. 319-320.
H.-G. Eckel, et al. “Optimization of the Turn-Off Performance of IGBT At Overcurrent and Short-Circuit Current”, The European Power Electronics Association, 1993, pp. 317-322, XP006511564.
O'Toole Colleen
Schneider Toshiba Inverter Europe Sas
Tra Quan
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