Power transistor circuit and the method thereof

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S081000, C327S543000

Reexamination Certificate

active

07495499

ABSTRACT:
The power transistor circuit with high-voltage endurance includes a first power transistor, a second power transistor and an enabling circuit. The first power transistor includes a first voltage endurance and a first inner resistance, while the second power transistor includes a second voltage endurance and a second inner resistance. The first voltage endurance and the first inner resistance are smaller than the second voltage endurance and the second inner resistance, respectively. The drain of the second power transistor is connected to the drain of the first power transistor and the enabling circuit. The enabling circuit enables the second power transistor first, and when the drain voltage of the first power transistor is smaller than the first endurance, the enabling circuit then enables the first power transistor.

REFERENCES:
patent: 3675114 (1972-07-01), Nercessian
patent: 4480201 (1984-10-01), Jaeschke
patent: 4994694 (1991-02-01), Gross
patent: 5467242 (1995-11-01), Kiraly
patent: 5764041 (1998-06-01), Pulvirenti et al.
patent: 5789971 (1998-08-01), Colletti et al.
patent: 6215338 (2001-04-01), Gervasi et al.
patent: 6573693 (2003-06-01), Okamoto
patent: 2004/0164786 (2004-08-01), Yamamoto et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power transistor circuit and the method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power transistor circuit and the method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power transistor circuit and the method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4096426

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.