Power transistor and method for controlling a power transistor

Miscellaneous active electrical nonlinear devices – circuits – and – External effect – Temperature

Reexamination Certificate

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C327S513000, C361S103000

Reexamination Certificate

active

07944269

ABSTRACT:
Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.

REFERENCES:
patent: 4875131 (1989-10-01), Leipold et al.
patent: 5070322 (1991-12-01), Fujihira
patent: 5349336 (1994-09-01), Nishiura et al.
patent: 5434443 (1995-07-01), Kelly et al.
patent: 5994752 (1999-11-01), Sander et al.
patent: 2005/0258464 (2005-11-01), Zundel et al.
patent: 1755221 (2007-02-01), None
patent: 1876710 (2008-01-01), None
Siemens BUZ 80; Semiconductor Group; Sep. 1996; pp. 1-9.

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