Power transistor

Details Power transistor Power transistor

2006-09-28

2009-08-18

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

C257S401000, C257SE51040, C977S938000

Reexamination Certificate

active

07576410

ABSTRACT:
A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that the plurality of nanotubes are electrically insulated from the semiconductor body and electrically connect the source and drain regions of the transistor. The power transistor also includes at least one diode formed in the semiconductor body. A portion of the at least one diode formed in the semiconductor body is configured to act as a gate electrode for the transistor.

REFERENCES:
patent: 6566704 (2003-05-01), Choi et al.
patent: 6740910 (2004-05-01), Roesner et al.
patent: 6891191 (2005-05-01), Xiao et al.
patent: 6930343 (2005-08-01), Choi et al.
patent: 7180107 (2007-02-01), Appenzeller et al.
patent: 7462890 (2008-12-01), Tombler et al.
patent: 2004/0253805 (2004-12-01), Dubin et al.
patent: 10324 752 (2005-01-01), None
patent: 102004003374 (2005-08-01), None

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