Power transistor

Details Power transistor Power transistor

1986-07-03

1989-05-02

Edlow, Martin H.

H01L 2702

Patent

active

048273228

ABSTRACT:
A power transistor according to the present invention improves breakdown resistance, in a monolithic structure for connecting a first-stage transistor and a second-stage transistor in Darlington connection, by constructing the same such that no parasitic transistor is substantially formed in the area for connecting the first-stage and second-stage transistors.

REFERENCES:
patent: 4136355 (1979-01-01), Mizukoshi et al.
patent: 4167748 (1979-09-01), D'Angelo et al.
High Voltage High Power Transistor Modules, Hiroshi Nishiumu Semiconductor Manufacturing Dept., Mitsubishi Electric Corp.

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