Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1995-02-01
1998-05-26
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257148, 257151, 257153, 257162, 257133, 257138, H01L 2974, H01L 31111
Patent
active
057570370
ABSTRACT:
The power thyristor of this invention has a cellular emitter structure. Each cell also has a FET assisted turn-on gate integrated into the cell. A turn-on gate voltage of one polarity is applied to a FET gate element that overlies the surface of the cell and to the turn-on gate integrated into the cell. When this voltage is so applied, a channel underlying the FET gate element becomes conductive, which allows the integrated turn-on gate to provide drive to the upper base-upper emitter junction of the thyristor cell thereby turning the thyristor cell on.
REFERENCES:
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4958211 (1990-09-01), Temple et al.
patent: 5350934 (1994-09-01), Matsuda
patent: 5350935 (1994-09-01), Temple
patent: 5442220 (1995-08-01), Arai
patent: 5449939 (1995-09-01), Horiguchi et al.
patent: 5485022 (1996-01-01), Matsuda
Temple et al, MOS-Controlled Thyristor (MCT) Power Switches, Power Conversion Intelligent Motion, Nov. 1992, pp. 9-16.
Mehta Harshad
Piccone Dante E.
Abraham Fetsum
Fahmy Wael
Freedman William
Silicon Power Corporation
Yamaoka Joseph H.
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