Power thyristor on a substrate

Patent

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Details

357 55, 357 75, H01L 2974

Patent

active

046724150

ABSTRACT:
A power thyristor assembly, includes an insulating and metallized substrate, and a power thyristor having a cathode and gate side facing toward and soldered to the substrate, and an anode side facing away from the substrate, the anode side having an anode and a passivation ditch surrounding the anode, the anode side including a reverse junction, the cathode and gate side including a blocking pn-junction, and the passivation ditch being common to the anode side reverse junction and to the cathode and gate side blocking pn-junction.

REFERENCES:
patent: 4156250 (1979-05-01), Trap
patent: 4388633 (1983-06-01), Vasudev

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