1988-06-22
1989-09-19
Hille, Rolf
357 79, 357 38, 357 59, 357 81, H01L 21447, H01L 2348, H01L 2354
Patent
active
048686360
ABSTRACT:
A power thyristor includes a semiconductor body having first and second main surfaces, the first main surface being planar; at least first and second metal electrodes disposed at least on the first main surface; the first electrode having a contact surface lying in a first plane parallel to the first main surface; the second electrode having a contact surface lying in a second plane parallel to the first main surface; the contact surface of the first electrode being further from the first main surface than the contact surface of the second electrode; the first electrode being formed of first and second layers and the second electrode being formed of a metal with a given thickness; the first layer being adjacent the first main surface and being formed of polycrystalline silicon; and said second layer being disposed on the first layer and being formed of the same metal with the same given thickness as the second electrode.
REFERENCES:
patent: 4096623 (1978-06-01), Prost et al.
Clark S. V.
Greenberg Laurence A.
Hille Rolf
Lerner Herbert L.
Siemens Aktiengesellschaft
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