Power switching transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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Details

C257S109000, C257S471000, C257S475000, C257SE21351

Reexamination Certificate

active

07982239

ABSTRACT:
In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source, and a second VJFET transistor having a source, and a gate disposed on each side of the second VJFET source. At least one gate of the first VJFET is separated from at least one gate of the second VJFET by a channel. The integrated semiconductor device also includes a Junction Barrier Schottky (JBS) diode positioned between the first and second VJFETs. The JBS diode comprises a metal contact that forms a rectifying contact to the channel and a non-rectifying contact to at least one gate of the first and second VJFETs, and the metal contact is an anode of the JBS diode. A first electrical connection ties the gates of the first VJFET, the gates of the second VJFET, and the anode of the JBS diode to a common gate electrode and a second electrical connection ties the source of the first VJFET and the source of the second VJFET to a common source electrode.

REFERENCES:
patent: 5807773 (1998-09-01), Chen et al.
patent: 5903020 (1999-05-01), Siergiej et al.
patent: 5945701 (1999-08-01), Siergiej et al.
patent: 7098488 (2006-08-01), Yoshikawa et al.
Rupp, Roland, et al., 2nd Generation SiC Schottky diodes: A new benchmark in SiC device ruggedness, Jun. 4-8, 2006, Proceedings of the 18th International Symposium on Power Semiconductor Devices & IC's, pp. 1-4.

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