Power switching semiconductor device including SI thyristor and

Details Power switching semiconductor device including SI thyristor and Power switching semiconductor device including SI thyristor and

1992-09-11

1994-10-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257 38, 257107, 257136, 257155, 257170, 257623, H01L 2900, H01L 2906

Patent

active

053571258

ABSTRACT:
A semiconductor device including a normally-on SI thyristor, and a MOSFET connected in cascade with the SI thyristor. The gate of the SI thyristor is connected to the source of the MOSFET. This arrangement makes it possible to turn the device on and off by controlling only the voltage gate of the MOSFET, obviating a current to maintain the on state of the device. The device needs little driving energy and has a low on state voltage and a high switching speed. It can readily be integrated into one chip.

REFERENCES:
patent: 4629901 (1986-12-01), Nishizawa
patent: 4768075 (1988-08-01), Broich et al.
patent: 4866500 (1989-09-01), Nishizawa et al.
patent: 4945266 (1990-07-01), Mori
patent: 4959703 (1990-09-01), Ogura et al.
patent: 4963971 (1990-10-01), Rosetti et al.
patent: 5122854 (1992-06-01), Iwamuro
patent: 5151762 (1992-09-01), Uemshi et al.

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