Power switching semiconductor device

Details Power switching semiconductor device Power switching semiconductor device

1990-06-21

1991-09-03

James, Andrew J.

357 234, 357 39, 357 43, 357 35, H01L 2972, H01L 2910, H01L 29747, H01L 2702

Patent

active

050459090

ABSTRACT:
A semiconductor power switching device has an insulated gate which establishes charge carrier flow between an additional terminal and a base region to provide current flow through the device between collector and emitter terminals. The device in effect comprises a bipolar transistor with an integral MOSFET for driving its base, so that a small signal applied to the gate drives the bipolar transistor into saturation. In use the collector is connected to a supply rail through a load and the additional terminal is connected directly or indirectly to the same rail.

REFERENCES:
patent: 4612562 (1986-09-01), Motojima et al.
patent: 4786961 (1988-11-01), Avery
patent: 4791470 (1988-12-01), Shinohe et al.
patent: 4800416 (1989-01-01), Musemeci
patent: 4903106 (1990-02-01), Fukunaga et al.
patent: 4954865 (1990-09-01), Rokos

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