Power switching circuit with controlled reverse leakage

Details Power switching circuit with controlled reverse leakage Power switching circuit with controlled reverse leakage

2005-02-22

2005-02-22

Ton, My-Trang Nu (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S437000

Reexamination Certificate

active

06859089

ABSTRACT:
A power switching circuit including an MOS power switching transistor (P1) is disclosed. The power switching transistor (P1) has a body node that is selectably biased to either its source or its drain, depending upon a comparison of the voltage at the circuit input (IN) relative to the voltage at the circuit output (OUT). In a reverse voltage situation in which the output voltage exceeds the input voltage, a first body node switching transistor (P11) connected between the body node of the power switching transistor (P1) and its source is turned off by a voltage corresponding to the output voltage, as conducted from the drain of the power switching transistor (P1) through a pull-down device (P5) in an inverter. Also in this reverse voltage situation, the gate of the power switching transistor (P1) is isolated from a control input (ON_/OFF) by series pass transistors (N0, N1; P12, P13), and the power switching transistor (P1) is held off by a bias transistor (P10), with a gate voltage also corresponding to the output voltage.

REFERENCES:
patent: 4529897 (1985-07-01), Suzuki et al.
patent: 5512814 (1996-04-01), Allman
patent: 6100719 (2000-08-01), Graves et al.
patent: 6421262 (2002-07-01), Saxelby et al.
patent: 6580258 (2003-06-01), Wilcox et al.
patent: 20020021164 (2002-02-01), Fugate et al.

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