Power switch structure with low RDSon and low current limit

Details Power switch structure with low RDSon and low current limit Power switch structure with low RDSon and low current limit

2005-09-27

2005-09-27

Ngô, Ngân V. (Department: 2818)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

C327S054000, C327S056000, C327S087000, C257S341000

Reexamination Certificate

active

06949961

ABSTRACT:
In one embodiment, a power switch device (33) includes a first MOSFET device41and a second MOSFET device (42). A split gate structure (84) including a first gate electrode (48,87) controls the first MOSFET device (41). A second gate electrode (49,92) controls the second MOSFET device (42). A current limit device (38) is coupled to the first gate electrode (48,97) to turn on the first MOSFET device during a current limit mode. A comparator device (36) is coupled to the second gate electrode (49,92) to turn on the second MOSFET device (42) when the power switch device (33) is no longer in current limit mode.

REFERENCES:
patent: 5986941 (1999-11-01), Pang et al.
patent: 6261907 (2001-07-01), Chang
patent: 6515463 (2003-02-01), Ling

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