Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-10-31
2006-10-31
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000
Reexamination Certificate
active
07129577
ABSTRACT:
A packaging system for a high current, low voltage power supply. The power supply uses bare die power FETs which are directly mounted to a thermally conductive substrate by a solder attachment made to the drain electrode metallization on the back side of the FETs. The source electrode and gate electrode of each FET are coupled to the circuitry on an overhanging printed circuit board, using CSP solder balls affixed to the front side of the FET die. The heat generated by the FETs is effectively dissipated by the close coupling of the FETs to the thermally conductive underlying substrate.
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Clark S. V.
O'Melveny & Myers LLP
Power-One, Inc.
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