Active solid-state devices (e.g. – transistors – solid-state diode – Contacts or leads including fusible link means or noise...
Patent
1994-04-04
1995-12-19
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Contacts or leads including fusible link means or noise...
257735, 257676, 257692, H01L 2348, H01L 2160
Patent
active
054770793
ABSTRACT:
A power source noise suppressing type semiconductor device has: a semiconductor chip formed therein with a first circuit and a second circuit, the semiconductor chip having a plurality of pads on the surface thereof, the pads including at least a first circuit pad electrically connected to the first circuit and a second circuit pad electrically connected to the second circuit; a plurality of leads including at least one power source lead, each of the plurality of leads having an inner lead and an outer lead; and a plurality of bonding wires for electrically connecting the pad to the inner lead of the lead, the first circuit pad being connected to a first connection point of the inner lead of the power source lead by a bonding wire, the second circuit pad being connected to a second connection point of the inner lead of the power source lead by a bonding wire, and the first and second connection points being spaced apart by a distance which allows the mutual inductance between the first and second connection points of the inner lead of the power source lead to become smaller than a self-inductance of the outer lead of the power source lead.
REFERENCES:
patent: 4595945 (1986-06-01), Graver
patent: 4612564 (1986-09-01), Moyer
patent: 5065224 (1991-11-01), Fraser et al.
Hiruta, et al., "Effects of Simultaneous Switching Noise on the Performance of a High-Speed Static Ram and its Improved Lead Frames", 1990 IEPS Conference, Reston, Va., (Abstract).
Hardy David B.
Kabushiki Kaisha Toshiba
Limanek Robert P.
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