Power semiconductor switching device

Details Power semiconductor switching device Power semiconductor switching device

1982-02-12

1984-09-18

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252R, 307255, H01L 2974

Patent

active

044726422

ABSTRACT:
A power semiconductor switching device comprises a first transistor which has semiconductor layers whose conductive types are alternately different in a first pattern and has an emitter connected to one end of a main circuit including a load; a second transistor which has a collector connected to the base of the first transistor, a base connected to the collector of the first transistor, an emitter connected to the other end of the main circuit, and semiconductor layers whose conductive types are alternately different in a second pattern; and a control transistor which has a paired main electrodes connected in parallel between the base and the emitter of at least one transistor in the first and second transistors to control load current passing between the emitter of the first transistor and the emitter of the second transistor by control of the base.

REFERENCES:
patent: 3885171 (1975-05-01), Hirano et al.
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4224634 (1980-09-01), Suedberg
patent: 4398205 (1983-08-01), Spellman et al.

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