Power semiconductor structure with lateral transistor driven by

Details Power semiconductor structure with lateral transistor driven by Power semiconductor structure with lateral transistor driven by

1997-05-20

1999-06-22

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257557, 257578, H01L 2900, H01L 27082, H01L 27102

Patent

active

059145226

ABSTRACT:
A power semiconductor structure (200), in particular in VIPower technology, made from a chip of N-type semiconductor material (110), comprising a bipolar or field-effect vertical power transistor (125, 120, 110) having a collector or drain region in such N-type material (110); the semiconductor structure comprises a PNP bipolar lateral power transistor (210, 110, 220) having a base region in such N-type material (110) substantially in common with the collector or drain region of the vertical power transistor.

REFERENCES:
patent: 3596115 (1971-07-01), Conzelmann
patent: 3713908 (1973-01-01), Agusta et al.
patent: 4395812 (1983-08-01), Bergeron et al.
patent: 5289028 (1994-02-01), Clark et al.
patent: 5521414 (1996-05-01), Palara
patent: 5525826 (1996-06-01), Palara
patent: 5602416 (1997-02-01), Zambrano
"TTL Circuit with Improved Noise Margin," IBM Technical Disclosure Bulletin, vol. 19, No. 1, pp. 142-143, Jun. 1976.
"Semconductor Devices Physics and Technology"; S. M. Sze 1985; pp. 110-111.

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