Power semiconductor structural element with four layers

Details Power semiconductor structural element with four layers Power semiconductor structural element with four layers

1988-10-31

1990-08-21

James, Andrew J.

H01L 2974

Patent

active

049511106

ABSTRACT:
Semiconductor structural elements with four regions of alternating conductivity type have a stored charge characteristic which becomes apparent as so-called "tail" current upon switching off. The tail current can be reduced by means of an anode-side emitter region containing damaged regions generated by laser bombardment which extend through a pn-junction formed between the anode-side emitter region and a central region up into the central region.

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