Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2006-08-15
2006-08-15
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S655000, C257S657000
Reexamination Certificate
active
07091579
ABSTRACT:
Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of the anode electrode and the cathode electrode. A ratio of the peak impurity concentration Npto an averaged impurity concentration Ndmin the n-drift layer is in the range of 1 to 5. This provides a diode and a manufacturing method thereof by which oscillations in voltage and current at reverse recovery are inhibited to achieve enhancement both in high speed and low-loss characteristics and in soft recovery characteristics.
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Flynn Nathan J.
Fuji Electric & Co., Ltd.
Mandala Jr. Victor A.
Rossi Kimms & McDowell LLP
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