Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Reexamination Certificate
2007-08-28
2007-08-28
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
C257S180000, C257S181000, C257S727000, C257S728000, C361S709000, C361S760000
Reexamination Certificate
active
11205903
ABSTRACT:
A semiconductor chip packaging structure comprising a dielectric film having one or more through holes aligned with the one or more contact pads of at least one power semiconductor chip. A patterned electrically conductive layer adjacent to the dielectric film has one or more electrically conductive posts which extend through the one or more though holes aligned with the contact pads to electrically couple the conductive layer to the contact pads. In certain embodiments, one or more air gaps may be formed between the dielectric film and the active surface of the at least one power semiconductor chip. Methods for fabricating the semiconductor chip packaging structure are also disclosed.
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Beaupre Richard Alfred
Elasser Ahmed
Fillion Raymond Albert
Korman Charles Steven
Wojnarowski Robert John
DeCristofaro Richard A.
Erdem Fazli
General Electric Company
Patnode Patrick K.
Purvis Sue A.
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