Power semiconductor module with multiple shielding layers

Details Power semiconductor module with multiple shielding layers Power semiconductor module with multiple shielding layers

1991-07-09

1994-03-22

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

257717, H01L 2334, H01L 23522

Patent

active

052967352

ABSTRACT:
A first insulating layer (32), a first shield pattern (iii) and a second insulating layer (112) are layered on an aluminum substrate (31) in that order. A first and a second power switching element (1, 2), which are in totem pole like connection, are provided On the second insulating layer (112). Also provided on the second insulating layer (112) are a first and a second control circuit (13, 14), through a second and a third shield pattern (101, 104) as well as a third and a fourth insulating layer (105, 106). The first shield pattern (111) is kept at a certain reference potential, because .+-.he first shield pattern (11) connected to a power source terminal N. The second and the third shield pattern (101, 104) are kept at potentials corresponding to the potentials of the output terminals of the first and the second power switching element (1, 2), respectively.

REFERENCES:
patent: 4847603 (1989-07-01), Blanchard
patent: 4851831 (1989-07-01), Stern
patent: 4945396 (1990-07-01), Shigekane et al.
patent: 5077595 (1991-12-01), Fukunaga

Affiliated with

Also associated with

Rating

Power semiconductor module with multiple shielding layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor module with multiple shielding layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor module with multiple shielding layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-438862