Power semiconductor module with flush terminal elements

Details Power semiconductor module with flush terminal elements Power semiconductor module with flush terminal elements

2011-05-24

2011-05-24

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

C257S688000, C257S785000

Reexamination Certificate

active

07948007

ABSTRACT:
A power semiconductor module includes a housing, terminal elements leading to the outside of the housing, an electrically insulated substrate arranged inside the housing, with the substrate being comprised of an insulating body and having on the first main face facing away from the base plate a plurality of connecting tracks electrically insulated from each other. The terminal and connecting elements are arranged on a connecting track in with contact faces contacting connecting tracks or power semiconductor components, with the individual contact faces having a plurality of partial contact faces. In one optional embodiment, each partial contact face has a maximum area of 20 mm2. In another embodiment, partial contact faces each are arranged at a distance of approximately 5 mm with regard to each other and the connection of the partial faces to the connecting tracks or the power semiconductor components is flush.

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German Office Action Response, 16 pages.

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