Power semiconductor module with a plurality of semiconductor chi

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257691, 257722, 257723, H01L 2302, H01L 2348, H01L 2352

Patent

active

060607726

ABSTRACT:
On a metal base, an insulated wiring substrate is fixed, and, on a conductive layer on the insulated wiring substrate, semiconductor chips are disposed. Above the semiconductor chips, a controlling substrate is provided, and the signals produced in this controlling substrate are supplied to electrodes on the surfaces of the semiconductor chips via bonding wires passing through openings provided in the controlling substrate.

REFERENCES:
patent: 5291065 (1994-03-01), Arai et al.
patent: 5444297 (1995-08-01), Oshima et al.
patent: 5466969 (1995-11-01), Tsunoda
patent: 5488256 (1996-01-01), Tsunoda
patent: 5497291 (1996-03-01), Hosen
patent: 5519252 (1996-05-01), Soyano et al.
patent: 5521437 (1996-05-01), Oshima et al.
patent: 5616955 (1997-04-01), Yamada et al.
patent: 5621243 (1997-04-01), Baba et al.
patent: 5920119 (1999-07-01), Tamba et al.
patent: 5942797 (1999-08-01), Terasawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power semiconductor module with a plurality of semiconductor chi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor module with a plurality of semiconductor chi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor module with a plurality of semiconductor chi will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1067757

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.