Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Patent
1998-06-29
2000-05-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
257691, 257722, 257723, H01L 2302, H01L 2348, H01L 2352
Patent
active
060607726
ABSTRACT:
On a metal base, an insulated wiring substrate is fixed, and, on a conductive layer on the insulated wiring substrate, semiconductor chips are disposed. Above the semiconductor chips, a controlling substrate is provided, and the signals produced in this controlling substrate are supplied to electrodes on the surfaces of the semiconductor chips via bonding wires passing through openings provided in the controlling substrate.
REFERENCES:
patent: 5291065 (1994-03-01), Arai et al.
patent: 5444297 (1995-08-01), Oshima et al.
patent: 5466969 (1995-11-01), Tsunoda
patent: 5488256 (1996-01-01), Tsunoda
patent: 5497291 (1996-03-01), Hosen
patent: 5519252 (1996-05-01), Soyano et al.
patent: 5521437 (1996-05-01), Oshima et al.
patent: 5616955 (1997-04-01), Yamada et al.
patent: 5621243 (1997-04-01), Baba et al.
patent: 5920119 (1999-07-01), Tamba et al.
patent: 5942797 (1999-08-01), Terasawa
Nakao Satoshi
Sugawara Hidekazu
Tsunoda Tetsujiro
Clark Jhihan B.
Kabushiki Kaisha Toshiba
Saadat Mahshid
LandOfFree
Power semiconductor module with a plurality of semiconductor chi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor module with a plurality of semiconductor chi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor module with a plurality of semiconductor chi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1067757