Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-06-28
2011-06-28
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S706000, C257S712000, C257SE25031
Reexamination Certificate
active
07968988
ABSTRACT:
The power semiconductor module (1) has a heat-conducting base plate (11) on which at least three substrates (2, 3, 4, 5, 6, 7) are placed, each substrate supporting at least one power semiconductor component (8, 9) that gives off heat generated during operation. In order to optimize a power semiconductor module of this type with regard to mechanical load and heat dissipation, the substrates (2, 3, 4, 5, 6, 7) are placed on the base plate (11) while being arranged in a single row (12), and pressing devices (15, 16), which are situated close to the substrate, are provided on both longitudinal sides (11a,11b) of the base plate (11) while being arranged parallel to the row (12). The base plate can be pressed against a cooling surface by the pressing devices.
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Nuebel Thomas
Schilling Oliver
Spanke Reinhold
Coats & Bennett P.L.L.C.
Infineon - Technologies AG
Nguyen Dilinh P
Sefer A.
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