Power semiconductor module as H-bridge circuit and method...

Details Power semiconductor module as H-bridge circuit and method... Power semiconductor module as H-bridge circuit and method...

2007-04-26

2008-11-11

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S723000, C257S773000, C257SE23079

Reexamination Certificate

active

07449778

ABSTRACT:
A power semiconductor module (41) as H-bridge circuit (42) has four power semiconductor chips (N1, N2, P1, P2) and a semiconductor control chip (IC). The semiconductor chips (N1, N2, P1, P2, IC) are arranged on three mutually separate large-area lead chip contact areas (43to45) of a lead plane (80). The semiconductor control chip (IC) is arranged on a centrally arranged lead chip contact area (45). An n-channel power semiconductor chip (N1, N2) as low-side switch (58, 59) and a p-channel power semiconductor chip (P1, P2) as high-side switch (48, 49) are in each case arranged on two laterally arranged lead chip contact areas (43, 44). The n-channel power semiconductor chips (N1, N2) are jointly at an earth potential (50) and the p-channel power semiconductor chips (P1, P2) are electrically connected to separate supply voltage sources (VS1, VS2).

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patent: 2006/0244116 (2006-11-01), Tsunoda
patent: 10121970 (2004-05-01), None

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