Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2009-08-31
2011-11-15
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S714000, C257SE23097
Reexamination Certificate
active
08058722
ABSTRACT:
Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.
REFERENCES:
patent: 4389268 (1983-06-01), Oshima et al.
patent: 6097089 (2000-08-01), Gaku et al.
patent: 6265767 (2001-07-01), Gaku et al.
patent: 7612448 (2009-11-01), Teraki et al.
Choi Seog Moon
Gao Shan
Hong Ju Pyo
Jang Bum Sik
Kim Tae Hyun
Blakely , Sokoloff, Taylor & Zafman LLP
Potter Roy K
Samsung Electro-Mechanics Co. Ltd.
LandOfFree
Power semiconductor module and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor module and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor module and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4293246