Power semiconductor module and method for its production

Details Power semiconductor module and method for its production Power semiconductor module and method for its production

2011-06-21

2011-06-21

Chervinsky, Boris L (Department: 2835)

Electricity: electrical systems and devices

Housing or mounting assemblies with diverse electrical...

For electronic systems and devices

C361S704000, C361S707000, C361S717000, C165S080100, C257S712000, C257S719000

Reexamination Certificate

active

07965516

ABSTRACT:
A power semiconductor module that includes a substrate having at least one power semiconductor element; a heat sink for dissipation of heat from the at least one power semiconductor element and a housing having a cutout which is arranged on a lower face of the housing facing the heat sink and holds the substrate; and to a method for production of such power semiconductor modules. The power semiconductor module has at least one holding element, which engages in a recess, which is associated with the at least one holding element, on the lower face of the housing and is designed such that it limits any movement of the substrate in the direction of the lower face of the housing.

REFERENCES:
patent: 5705853 (1998-01-01), Faller et al.
patent: 5808868 (1998-09-01), Drekmeier
patent: 6104614 (2000-08-01), Chou et al.
patent: 6704206 (2004-03-01), Martin et al.
patent: 6791183 (2004-09-01), Kanelis
patent: 7034395 (2006-04-01), Stolze
patent: 7291914 (2007-11-01), Stolze
patent: 7477518 (2009-01-01), Stolze et al.
patent: 7692293 (2010-04-01), Apfelbacher et al.
patent: 2010/0039774 (2010-02-01), Steger et al.
patent: 101 49 886 (2003-04-01), None
patent: 10 2008 033 852 (2009-09-01), None

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