Power semiconductor module

Details Power semiconductor module Power semiconductor module

1986-10-30

1988-08-30

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 75, 357 79, 357 81, 307315, 307318, 307570, 307633, H01C 2974

Patent

active

047680750

ABSTRACT:
A power semiconductor module including a cascade circuit of a low-voltage high-current MOSFET and of a bipolar semiconductor element, for example a field-controlled thyristor, GTO thyristor or Darlington transistor, as a hybrid combination. In this manner, it is possible to achieve a construction, which exhibits low induction and which saves space and which at the same time permits efficient cooling of the module.

REFERENCES:
patent: 3935501 (1976-01-01), Sterbac
patent: 4218695 (1980-08-01), Egerbacher et al.
patent: 4492975 (1985-01-01), Yamada et al.
patent: 4514747 (1985-04-01), Miyata et al.
patent: 4547686 (1985-10-01), Chen
patent: 4571815 (1986-02-01), Baliga et al.
patent: 4639759 (1987-01-01), Neidig et al.
patent: 4649416 (1987-03-01), Borkowski et al.
patent: 4651035 (1987-03-01), Shigekane
patent: 4663547 (1987-05-01), Baliga et al.

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