Power semiconductor module

Details Power semiconductor module Power semiconductor module

2006-11-09

2009-12-29

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S692000, C257S694000, C257S758000, C257S781000, C257S784000, C257S786000

Reexamination Certificate

active

07638872

ABSTRACT:
A power semiconductor module is presented. The power semiconductor module has a substrate, a composite film, and a power semiconductor component between the substrate and the composite film. The composite film has a thin circuit-structured logic metal layer and a thick circuit-structured power metal layer and between them a thin electrically insulating plastic film. The composite film includes contact nubs, which provide bonding to the power semiconductor component. Feedthrough holes are provided between the logic metal layer and the power metal layer. The plastic film in the region of the respective through-plated hole includes a recess in a region that is free of the logic metal layer. A segment of a flexible thin wire extends through the free region of the logic metal layer and through the recess in the plastic film and is bonded to the logic metal layer and the power metal layer by means of bonding sites.

REFERENCES:
patent: 2002/0121688 (2002-09-01), Kinsman et al.
patent: 103 55 925 (2005-06-01), None

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