Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2006-07-28
2009-08-25
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S678000, C257S713000, C257S690000, C257S692000, C257S666000
Reexamination Certificate
active
07579682
ABSTRACT:
A power semiconductor module has a ceramic substrate (9) which has on at least one side a patterned metallization (50) with a fineness of pattern of smaller than or equal to 800 μm, a first semiconductor chip (10) which has a power semiconductor component and which is arranged on the patterned metallization (50), and a second semiconductor chip (30) which has drive electronics for driving the first semiconductor chip (10) and which is arranged on the patterned metallization (50). Furthermore, at least one thin-wire bond (2, 3) with a bonding-wire diameter (d2, d3) of smaller than or equal to 75 μm is provided which is formed between the patterned metallization (50) and the second semiconductor chip (30).
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German Office Action for German Patent Application No. 102005036116.1 (4 pages).
Coats & Bennett P.L.L.C.
Green Telly D
Infineon - Technologies AG
Wilczewski M.
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