Power semiconductor module

Details Power semiconductor module Power semiconductor module

2007-10-17

2009-06-16

Thai, Luan C (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S706000, C257S720000, C257S722000, C257SE23105, C257SE23088

Reexamination Certificate

active

07547966

ABSTRACT:
A power semiconductor module with its thermal resistance and overall size reduced. Insulating substrates with electrode metal layers disposed thereon are joined to both the surfaces of a power semiconductor chip by using, for example, soldering. Metal layers are disposed also on the reverse surfaces of the insulating substrates and the metal layers are joined to the heat spreaders by using brazing. Heat radiating fins are provided on the heat radiating surface of at least one of the heat spreaders. The heat radiating side of each of the heat spreaders is covered by a casing to form a refrigerant chamber through which refrigerant flows to remove heat transmitted from the semiconductor chip to the heat spreader.

REFERENCES:
patent: 6703707 (2004-03-01), Mamitsu et al.
patent: 6845012 (2005-01-01), Ohkouchi
patent: 7027302 (2006-04-01), Inoue
patent: 7145254 (2006-12-01), Hirano et al.
patent: 2005-175130 (2005-06-01), None
patent: 2007-251076 (2007-09-01), None
U.S. Appl. No. 11/657,458, filed Jan. 25, 2007, Hitachi, Ltd.

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