Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-09-12
2006-09-12
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S076000
Reexamination Certificate
active
07105932
ABSTRACT:
A power semiconductor module comprises a wide band gap semiconductor chip having its surface with an electrode provided thereon, and more than one bonding wire which is connected to an edge portion of the electrode directly or indirectly via an electrode pad. The electrode and the electrode pad have their thickness values that are specifically set in such a way as to obtain a conduction area ratio equal to or greater than a conduction area ratio of the wide band gap semiconductor chip in the case where a respective one of the electrode and electrode pad is made of aluminum while letting a total thickness value of the electrode and the electrode pad measure ten micrometers (10 μm).
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Kodani Kazuya
Shingai Nobuhiro
Clark S. V.
Kabushiki Kaisha Toshiba
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