Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2005-07-05
2005-07-05
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S150000, C257S177000, C257S180000, C257S182000, C257S684000, C257S685000, C257S687000, C257S703000, C257S705000, C257S706000, C257S712000, C257S713000, C257S717000, C257S750000, C257S758000, C257S762000, C257S765000, C257S772000
Reexamination Certificate
active
06914325
ABSTRACT:
A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base.
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Kobayashi Takatoshi
Miyasaka Tadashi
Morozumi Akira
Yamada Katsumi
Fuji Electric & Co., Ltd.
Soward Ida M.
Staas & Halsey , LLP
Zarabian Amir
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