Power semiconductor module

Details Power semiconductor module Power semiconductor module

2011-04-19

2011-04-19

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S787000, C257S788000, C257S100000

Reexamination Certificate

active

07928587

ABSTRACT:
A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.

REFERENCES:
patent: 5785799 (1998-07-01), Culnane et al.
patent: 6165820 (2000-12-01), Pace
patent: 6353258 (2002-03-01), Inoue et al.
patent: 7105932 (2006-09-01), Kodani et al.
patent: 2003/0052400 (2003-03-01), Okura et al.
patent: 2004/0248330 (2004-12-01), Kitabatake et al.
patent: 2006/0226433 (2006-10-01), Kawano
patent: 2007/0141755 (2007-06-01), Luechinger
patent: 2007/0290305 (2007-12-01), Oyama et al.
patent: 2009/0039484 (2009-02-01), Mahler et al.
patent: 2006-179538 (2006-07-01), None
Office Action in German Patent Appln. 10 2008 019 407.7-33 (with English language translation), dated Nov. 23, 2009.

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