Power semiconductor module

Details Power semiconductor module Power semiconductor module

1996-08-19

1998-01-06

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257718, 257785, 257727, 257726, 257177, 257181, 257690, H01L 2974, H01L 2316, H01L 2507, H01L 2302

Patent

active

057058539

ABSTRACT:
A power semiconductor module is specified in which at least one semiconductor chip, which is fitted on a baseplate, is made contact with by a respective contact plunger. The position of the contact plungers can be set individually in a manner corresponding to a distance between the semiconductor chips and a main connection which accommodates the contact plungers. The contact plungers are either subjected to pressure by means of a spring or fixed by means of a solder layer.

REFERENCES:
patent: 3064341 (1962-11-01), Masterson
patent: 3972012 (1976-07-01), Liu
patent: 4574299 (1986-03-01), Glascock, II et al.
patent: 4646131 (1987-02-01), Amagasa et al.
patent: 5016088 (1991-05-01), Ermilou et al.
patent: 5221851 (1993-06-01), Gobrecht et al.
Roberts, Bruce, et al., "Interconnect Metallization for Future Device Generations"; Solid State Technology, Feb. 1995; pp. 69, 70, 72, 74, 76 and 78.

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