Power semiconductor module

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With means to prevent explosion of package

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257687, 257788, H01L 2316

Patent

active

059776218

ABSTRACT:
A power semiconductor module is specified in which a layer of foam is arranged under the housing cover in the housing. The foam not only enables mechanical support of the potting compound, so that the latter is prevented from becoming detached, but can also absorb a large pressure increase in the event of a short circuit by virtue of compression. In this way, a compensating volume is created without the housing being destroyed. The housing remains closed and no material is hurled into the surroundings.

REFERENCES:
patent: 5744860 (1998-04-01), Bayerer et al.
T. Stockmeier, et al., "Reliable 1200 Amp 2500 V IGBT Modules for Traction Applications," IEE IGBT Propulsion Drives Colloquium, Apr. 25, 1995, pp. 1-13.

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