Power semiconductor devices with a temperature sensor circuit

Details Power semiconductor devices with a temperature sensor circuit Power semiconductor devices with a temperature sensor circuit

1998-02-18

1999-03-23

Wong, Peter S.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323907, 327513, 327541, G05F 316, G06G 710

Patent

active

058865152

ABSTRACT:
A temperature sensor circuit of a power semiconductor component comprises temperature-sensitive elements, some (Q1, and R1 to R3) of which are located in the vicinity of an active area of the component where heat is generated by the power semiconductor device (MPWR), whereas others (such as R4, R') are located more remote from the heat-generating active area and so are in a cool location. Hot-location elements (Q1, and R1 to R3) with different temperature coefficients are present in a first comparator circuit for indicating device temperature (Tabs) in the vicinity of the heat-generating active area. Both hot-location and cool-location elements (R2 and R4) are present in a second comparator circuit for indicating when a temperature gradient (Tdiff) threshold occurs. A circuit connection (5, 7) between the first and second comparator circuits, preferably at the inputs of their respective comparators (CP1, CP2) couples together the hot-location temperature-sensitive elements (Q1, R1, R2, R3) of the first and second comparator circuits so that the temperature gradient threshold sensed by the second comparator circuit decreases as a function of the device temperature (Tabs).

REFERENCES:
patent: 4929884 (1990-05-01), Bird et al.
patent: 5563760 (1996-10-01), Lowis et al.

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