Power semiconductor devices that utilize buried insulating regio

Details Power semiconductor devices that utilize buried insulating regio Power semiconductor devices that utilize buried insulating regio

1999-07-13

2000-06-13

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257607, 257612, H01L 2910

Patent

active

060752599

ABSTRACT:
Power semiconductor devices include a semiconductor substrate having a face thereon and a buried electrically insulating layer extending laterally in the semiconductor substrate and having an opening therein. A drift region of first conductivity type is also provided in the semiconductor substrate. To improve breakdown voltage characteristics, the drift region extends through the opening in the buried electrically insulating layer and has a first conductivity type doping concentration therein that is established at a level sufficient to generate a first conductivity type charge density of between 1.times.10.sup.12 cm.sup.-2 and 5.times.10.sup.13 cm.sup.-2 across the opening.

REFERENCES:
patent: 5396087 (1995-03-01), Baliga
patent: 5543637 (1996-08-01), Baliga
patent: 5681762 (1997-10-01), Baliga
patent: 5780878 (1998-07-01), Bhatnagar et al.
patent: 5877047 (1999-03-01), Wetizel et al.
patent: 5950076 (1999-09-01), Baliga

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