Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1998-03-11
2000-08-29
Jackson, Jr, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257152, 257164, 257342, 257401, H01L 29745
Patent
active
06111278&
ABSTRACT:
Power semiconductor devices having discontinuous emitter regions therein include a semiconductor substrate containing therein a collector region of second conductivity type, a buffer region of first conductivity type which forms a first P-N junction with the collector region and a drift region of first conductivity type which forms a non-rectifying junction with the buffer region. A base region of second conductivity type is also provided in the drift region and forms a second P-N junction therewith. In addition, a base contact region of second conductivity type is provided in the base region of second conductivity type. The base contact region typically has a much higher second conductivity type doping concentration therein than the base region. A preferred emitter region is also provided in the substrate. This preferred emitter region comprises an emitter contact region which is entirely surrounded in the substrate by the highly doped base contact region and a carrier emitting region. This emitter contact region may comprise the central portion of an S, H or C-shaped emitter or one side of an L-shaped emitter. An insulated gate electrode is also provided. The insulated gate electrode provides turn-on and turn-off control by enabling the formation of a highly conductive inversion-layer channel of first conductivity type in the base region. This inversion-layer channel electrically connects the carrier emitting region to the drift region. A first electrode is also electrically coupled to the base contact region and the emitter contact region, and a second electrode is electrically coupled to the collector region.
REFERENCES:
patent: 3753055 (1973-08-01), Yamashita et al.
patent: 4639754 (1987-01-01), Wheatley
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 4980740 (1990-12-01), Pattanayak et al.
patent: 5034336 (1991-07-01), Seki
patent: 5057884 (1991-10-01), Suzuki et al.
patent: 5089864 (1992-02-01), Sakurai
patent: 5095343 (1992-03-01), Klodzinski et al.
patent: 5136349 (1992-08-01), Yilmaz et al.
patent: 5160985 (1992-11-01), Akiyama
patent: 5170239 (1992-12-01), Hagino
patent: 5198687 (1993-03-01), Baliga
patent: 5210432 (1993-05-01), Shinohe
patent: 5245202 (1993-09-01), Yasukazu
patent: 5258638 (1993-11-01), Elhatem et al.
patent: 5315139 (1994-05-01), Endo
patent: 5323036 (1994-06-01), Neilson et al.
patent: 5326993 (1994-07-01), Iwamuro
patent: 5338961 (1994-08-01), Lidow et al.
patent: 5349212 (1994-09-01), Seki
patent: 5396087 (1995-03-01), Baliga
patent: 5397905 (1995-03-01), Otsuki et al.
patent: 5428228 (1995-06-01), Ogura et al.
patent: 5444273 (1995-08-01), Ueno
patent: 5468668 (1995-11-01), Neilson et al.
patent: 5475243 (1995-12-01), Saito
patent: 5485023 (1996-01-01), Sumida
patent: 5488236 (1996-01-01), Baliga et al.
patent: 5490095 (1996-02-01), Shimada et al.
patent: 5519241 (1996-05-01), Oppermann et al.
patent: 5548133 (1996-08-01), Kinzer
patent: 5563439 (1996-10-01), Chung et al.
Nandakumar et al., The Base Resistance Controlled Thyristor (BRT) "A New MOS Gated Power Thyristor", IEEE, 1991, pp. 138-141.
Atwood Pierce
Caseiro Chris A.
Fairchild Korea Semiconductor Ltd.
Jackson, Jr Jerome
Scott, Esq. Grant J.
LandOfFree
Power semiconductor devices having discontinuous emitter regions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor devices having discontinuous emitter regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor devices having discontinuous emitter regions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1252583