Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode
Patent
1995-03-15
1995-12-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Avalanche diode
257630, H01L 29161, H01L 2920, H01L 2922
Patent
active
054752582
ABSTRACT:
A semiconductor device has a protective Zener diode formed through an insulation film to a silicon substrate having a power MOSFET formed thereon. The breakdown strength of the insulation film is substantially improved and the withstand voltage of the Zener diode can be set to a high value. A gate plate 11 electrically connected to an outer circumferential part of a p-type diffusion region 104 is installed, and element parts 112a-112c and equipotential plates 113a-133c constituting a Zener diode group 115 are formed. The equipotential plates 113a-133c hold a prescribed potential by Zener diode pairs 114 of the element parts 112a-112c.
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patent: 4990976 (1991-02-01), Hattori
patent: 5204988 (1993-04-01), Sakurai
Atwood et al, `High Breakdown Voltage Device`; IBM Tech Discl, vol. 17, No. 8, 1975 Jan., p. 2333.
Patent Abstract of Japan vol. 14 No. 328 (E0952) Apr. 1990 re JP-A 2110976.
I. Yoshida et al, "Novel Gate-Protection Devices for MOSFET's", Japanese Journal of Appl. Science, (1983) pp. 81-84.
Kato Naohito
Okabe Naoto
Toyoda Etsuji
Meier Stephen D.
Ngo Ngan V.
Nippondenso Co. Ltd.
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