Power semiconductor device with mesa type structure

Details Power semiconductor device with mesa type structure Power semiconductor device with mesa type structure

1984-12-18

1986-10-21

James, Andrew J.

357 79, 357 38, 357 68, 357 65, 29591, H01L 2906

Patent

active

046188770

ABSTRACT:
A mesa type power semiconductor device comprising a mesa groove disposed on the bottom thereof with separated gate electrodes leaving the central portion of the groove bottom free from a gate electrode. This construction is effective in preventing occurrence of an insulator breakdown between a cathode and a gate electrode.

REFERENCES:
patent: 4156963 (1979-06-01), Tsuji
patent: 4246596 (1981-01-01), Iwasaki

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