Power semiconductor device with main current section and emulati

Details Power semiconductor device with main current section and emulati Power semiconductor device with main current section and emulati

1986-07-31

1988-11-08

James, Andrew J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 28, 357 231, 357 2314, 357 36, 361 93, 361 87, H01L 2972, H01L 2978, H01L 2356, H02H 300

Patent

active

047836903

ABSTRACT:
A power semiconductor device incorporates in its active, or current-carrying, region a main current section and an emulation current section. The active region is surrounded by a common device termination region. This is accomplished through provision of respective separate cathodes for the main and emulation current regions, while the device anode is common to both the main and emulation current sections. The current level in the emulation current section provides an accurate representation of the current level in the main current section since the main and emulation current sections are closely coupled both thermally and electrically and, further, are formed in the same fabrication process. The current level in the main current section can be economically determined with low power circuitry by way of sensing the current level in the emulation current section.

REFERENCES:
patent: 4136354 (1979-01-01), Dobkin
patent: 4682197 (1987-07-01), Villa et al.
Elliot et al., "Self-Limiting Off-Chip Driver", IBM Technical Disclosure Bulletin, vol. 16, No. 8, Jan. 1974, pp. 2679-2680.
Pelly, B. R., "The Do's and Dont's of Using Power HEXFETs", HEXFET Databook, International Rectifier, C. 1981, pp. 6-11.
B. J. Baliga et al., "The Insulated Gate Rectifier (IGR): A New Power Switching Device", IEDM 82 (Dec. 1982), pp. 264-267.
J. Tihanyi, "Functional Integration of Power MOS and Bipolar Devices", IEDM Technical Digest, Dec. 8th-10th, 1980, Washington, DC, pp. 75-76.

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