Power semiconductor device with low on-state voltage

Details Power semiconductor device with low on-state voltage Power semiconductor device with low on-state voltage

1994-09-19

1997-05-20

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257139, 257566, 257577, H01L 2974, H01L 2900, H01L 27082

Patent

active

056314949

ABSTRACT:
A circuit connecting a sub-IGBT element S.sub.2 having a smaller current capacity and a smaller saturated current than the main IGBT element S.sub.1 and a resistance R.sub.1 in series is connected to the main IGBT element S.sub.1 in parallel, a MOSFET element S.sub.3 being connected between the gate electrode of the sub-IGBT element S.sub.2 and the emitter electrode of the main IGBT element S.sub.1, a delay element being connected between the gate electrode of the sub-IGBT element S.sub.2 and the gate electrode of the main IGBT element S.sub.1. In normal operation, the ON-state voltage is small and low loss can be realized. In the event of a short-circuit accident, the sub-IGBT element S.sub.2 detects the short-circuit before the main IGBT element S.sub.1 turns on to prevent an over-current from flowing in the main IGBT element S.sub.1, which substantially improves the short-circuit resistivity of the semiconductor device.

REFERENCES:
patent: 5091664 (1992-02-01), Furuhata
patent: 5272392 (1993-12-01), Wong et al.
patent: 5366916 (1994-11-01), Summe et al.
patent: 5371420 (1994-12-01), Nakao
patent: 5422593 (1995-06-01), Fujihira
patent: 5432471 (1995-07-01), Majumdar et al.

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