Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1991-07-29
1994-11-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257154, 257528, 257578, H01L 2974, H01L 31111, H01L 2900, H01L 27082
Patent
active
053650859
ABSTRACT:
A power semiconductor device constituted of a MOSFET incorporating a current detecting function for detecting current making use of a voltage drop developed across a channel resistance in which variations in the channel resistance due to its temperature and the gate voltage are compensated for and thereby highly accurate current detection is achieved.
REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4402003 (1983-08-01), Blanchard
patent: 4605948 (1986-08-01), Martinelli
patent: 4612449 (1986-09-01), Patalong
patent: 4630084 (1986-12-01), Tihanyi
patent: 4691223 (1987-09-01), Murakami et al.
patent: 4783690 (1988-11-01), Walden et al.
patent: 4962411 (1990-10-01), Tokura et al.
Tokura Norihito
Yamamoto Tsuyoshi
Fahmy Wael
Mintel William
Nippondenso Co. Ltd.
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