Power semiconductor device having raised channel and...

Details Power semiconductor device having raised channel and... Power semiconductor device having raised channel and...

2006-02-14

2010-11-09

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S256000, C257S328000, C257S329000, C257S367000, C257S402000, C257SE29004, C257SE29014, C438S199000, C438S206000, C438S212000

Reexamination Certificate

active

07829898

ABSTRACT:
In a MOSFET using SiC a p-type channel is formed by epitaxial growth, so that the depletion layer produced in the p-type region right under the channel is reduced, even when the device is formed in a self-aligned manner. Thus, a high breakdown voltage is obtained. Also, since the device is formed in a self-aligned manner, the device size can be reduced so that an increased number of devices can be fabricated in a certain area and the on-state resistance can be reduced.

REFERENCES:
patent: 5561302 (1996-10-01), Candelaria
patent: 6281521 (2001-08-01), Singh
patent: 6573534 (2003-06-01), Kumar et al.
patent: 6639273 (2003-10-01), Ueno
patent: 2004/0119076 (2004-06-01), Ryu
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patent: 2005-33030 (2005-02-01), None
Kumar, R., et al. “A Novel Diffusion Resistant P-Base Region Implanatation for Accumulation-Mode 4H-SiC Epi-Channel Field Effect Transistor”,Extented Abstract of 1999 inter. Conf. On Solid State Devices and Materials, pp. 146-147.

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