Power semiconductor device having lines within a housing

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices

Reexamination Certificate

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Details

C257S776000, C257S777000, C257SE23010, C257SE23014

Reexamination Certificate

active

07821128

ABSTRACT:
A power semiconductor device has a semiconductor chip stack and lines within a housing. The lines electrically connect large-area contact regions of power semiconductor device components within the housing to one another. In this case, at least one of the lines has a large-area planar conductive layer. This planar conductive area electrically connects the large-area contact regions to one another.

REFERENCES:
patent: 5532512 (1996-07-01), Fillion et al.
patent: 6031279 (2000-02-01), Lenz
patent: 6774466 (2004-08-01), Kajiwara et al.
patent: 6881071 (2005-04-01), Heilbronner
patent: 7183655 (2007-02-01), Nishioka
patent: 7262444 (2007-08-01), Fillion et al.
patent: 7479691 (2009-01-01), Ewe et al.
patent: 7524775 (2009-04-01), Ewe et al.
patent: 2001/0052641 (2001-12-01), Kuo et al.
patent: 2002/0113299 (2002-08-01), Kinsman et al.
patent: 2002/0173192 (2002-11-01), Heilbronner
patent: 2005/0146005 (2005-07-01), Shimoishizaka et al.
patent: 2005/0224945 (2005-10-01), Saito et al.
patent: 19635582 (1998-02-01), None
patent: 10121970 (2002-11-01), None
patent: 102004019443 (2005-08-01), None

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